hi-sincerity microelectronics corp. spec. no. : mos200808 issued date : 2008.11.12 revised date :2009,03,05 page no. : 1/5 h4946ds & h4946dp hsmc product specification h4946 series 8-lead plastic dip-8 package code: p 1 2 3 4 8 7 6 5 q1 q2 h4946ds symbol & pin assignment pin 1: source 2 pin 2: gate 2 pin 3: source 1 pin 4: gate 1 pin 5 / 6: drain 1 pin 7 / 8: drain 2 5 1 2 6 7 8 3 ? 4 8-lead plastic so-8 package code: s n-channel enhancement mode power mosfet (60v, 5a) features ? r ds(on) <41m @v gs =10v, i d =5.0a ? r ds(on) <55m @v gs =4.5v, i d =2.5a ? low on-resistance ? fast switching speed ? sop-8 package description the advanced power mosfets provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. absolute maximum ratings (t a =25 o c, unless otherwise noted) symbol parameter ratings units v ds drain-source voltage 60 v v gs gate-source voltage 20 v id@ta=25 continuous drain current) 6.0 a id@ta=70 continuous drain current 3.5 a i dm drain current (pulsed) *1 20 a p d total power dissipation @t a =25 o c 2.0 w t stg storage temperature range -55 to +150 c t j , operating junction temperature range -55 to +150 c *1: repetitive rating: pulse width limited by the maximum junction temperation. *2: 1-in 2 2oz cu pcb board
hi-sincerity microelectronics corp. spec. no. : mos200808 issued date : 2008.11.12 revised date :2009,03,05 page no. : 2/5 h4946ds & h4946dp hsmc product specification electrical characteristics (t a =25 c, unless otherwise noted) symbol characteristic test c onditions min. typ. max. unit ? static bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 v bvdss/ tj breakdown voltage temperature coefficient reference to 25 : , id=1ma 0.06 v/: v gs =10v, i d =5.0a 41 r ds(on) drain-source on-state resistance v gs =4.5v, i d =2.5a 55 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 3 v i dss zero gate voltage drain current (tj=25 c) v ds =60v, v gs =0v 1 ua i gss gate-body leakage current v gs = 20v, v ds =0v 100 na g fs forward transconductance v ds =10v, i d =5.0a 7.0 s ? drain-source diode characteristics v sd drain-source diode forward voltage v gs =0v, i s =1.6a 1.2 v note: pulse test: pulse width 300us, duty cycle 2%
hi-sincerity microelectronics corp. spec. no. : mos200808 issued date : 2008.11.12 revised date :2009,03,05 page no. : 3/5 h4946ds & h4946dp hsmc product specification characteristics curve 0 5 10 15 20 25 01234 vds , drai n - t o- s ou rce vol t age ( v ) id,drain current( a ta=2 5 3.0v 10v 6.0v 4.5v fig 1.typical output 0 5 10 15 20 25 0123 vds,drain-to-source voltage(v) id,drain current 4 ( ta=1 5 0 10v 6.0v 4.5v 3.0v fig 2.typical output characte ris tics 30 34 38 42 46 50 35791 1 vgs,gat e - t o- sour c e volt age ( v) rds(on)( 0 10 20 30 40 50 60 70 -50 0 50 100 150 200 tj,juncti on tem perature( ) normalized rda( o m fig 4.norm alized on-resistance v.s.junctio n fig 3.on-resistance v.s.gate voltage t 0 0.5 1 1.5 2 2.5 -50 0 50 100 150 tj , j u n c t i o n te m p e r a t u r e ( ) vgs(th)( v fig 6.gate threshold voltage v.s.junction 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 vsd,source-to-drain voltage(v) is(a ) fig 5.forward characteristic of reverse diode tj=150 tj =2 5
hi-sincerity microelectronics corp. spec. no. : mos200808 issued date : 2008.11.12 revised date :2009,03,05 page no. : 4/5 h4946ds & h4946dp hsmc product specification dip-8 dimension a b 87 65 432 1 h i f g j k m l 1 e d c dim min. max. h4946dp marking: pin style: 1.s2 2.g2 3.s1 4.g1 5 & 6.d1 7 & 8.d2 a 6.29 6.40 b 9.22 9.32 c - *1.52 d - *1.27 e - *0.99 f 3.25 3.35 g 3.17 3.55 h 0.38 0.53 note: green label is used for pb-free packing i 2.28 2.79 material: ? lead solder plating: sn60/pb40 (normal), sn/3.0ag/0.5cu or pure-tin (pb-free) ? mold compound: epoxy resin family, flammability solid bu rning class: ul94v-0 j 7.49 7.74 k - *3.00 l 8.56 8.81 m 0.229 0.381 94 o 97 o 1 a 6.29 6.40 *: typical, unit: mm 8-lead dip-8 plastic package hsmc package code: p sop-8 dimension dim min. max. a 4.85 5.10 b 3.85 3.95 c 5.80 6.20 d 1.22 1.32 e 0.37 0.47 f 3.74 3.88 g 1.45 1.65 h 4.80 5.10 i 0.05 0.20 j 0.30 0.70 k 0.19 0.25 l 0.37 0.52 m 0.23 0.28 n 0.08 0.13 o 0.00 0.15 *: typical, unit: mm a important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of hsmc. ? hsmc reserves the right to make changes to its products without notice. ? hsmc semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? hsmc assumes no liability for any consequence of customer prod uct design, infringement of paten ts, or application assistance. head office and factory: ? head office (hi-sincerity microelectronics corp.): 10f.,no. 61, sec. 2, chung-shan n. rd. taipei taiwan r.o.c. tel: 886-2-25212056 fax: 886-2-25632712, 25368454 b f c d e g h4946ds marking: i part a h 234 5 6 7 8 j k o m l n part a pin1 index pin style: 1.s2 2.g2 3.s1 4.g1 5 & 6.d1 7 & 8.d2 note: green label is used for pb-free packing material: ? lead solder plating: sn60/pb40 (normal), sn/3.0ag/0.5cu or pure-tin (pb-free) ? mold compound: epoxy resin family, flammability solid bu rning class: ul94v-0 8-lead so-8 plastic surface mounted package hsmc package code: s
hi-sincerity microelectronics corp. spec. no. : mos200808 issued date : 2008.11.12 revised date :2009,03,05 page no. : 5/5 h4946ds & h4946dp hsmc product specification soldering methods for hsmc?s products 1. storage environment: temperature=10 o c~35 o c humidity=65%15% 2. reflow soldering of surface-mount devices figure 1: temperature profile t p profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) <3 o c/sec <3 o c/sec preheat - temperature min (ts min ) - temperature max (ts max ) - time (min to max) (ts) 100 o c 150 o c 60~120 sec 150 o c 200 o c 60~180 sec ts m a x t o t l - ramp-up rate <3 o c/sec <3 o c/sec time maintained above: - temperature (t l ) - time (t l ) 183 o c 60~150 sec 217 o c 60~150 sec peak temperature (t p ) 240 o c +0/-5 o c 260 o c +0/-5 o c time within 5 o c of actual peak temperature (t p ) 10~30 sec 20~40 sec ramp-down rate <6 o c/sec <6 o c/sec time 25 o c to peak temperature <6 minutes <8 minutes 3. flow (wave) soldering (solder dipping) products peak temperature dipping time pb devices. 245 o c 5 o c 10sec 1sec pb-free devices. 260 o c 5 o c 10sec 1sec t l ramp-down ramp-up ts max ts min critical zone t l to t p t s preheat t l t p 25 temperature t 25 o c to peak time
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